Wide Bandgap Semiconductor Power Devices

• Author : B. Jayant Baliga
• Publisher : Woodhead Publishing
• Release : 17 October 2018

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field.

• Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
• Publisher : John Wiley & Sons
• Release : 22 November 2021

A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage to the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information

• Author : S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
• Publisher : The Electrochemical Society
• Release : 18 May 2022

• Author : Yogesh Kumar Sharma
• Publisher : BoD – Books on Demand
• Release : 12 September 2018

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have

• Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
• Publisher : Springer Science & Business Media
• Release : 12 April 2007

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

• Author : Douglas Pappis
• Publisher : BoD – Books on Demand
• Release : 01 January 2021

In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric

• Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
• Publisher : CRC Press
• Release : 03 November 2016

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

• Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
• Publisher : World Scientific
• Release : 10 December 2019

With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the

• Author : Jung-Hun Seo
• Publisher : MDPI
• Release : 25 April 2019

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV)

• Author : Yuru Wang
• Publisher : Unknown
• Release : 18 May 2022

• Author : J. Hite,V. Chakrapani,J. Zavada,T. J. Anderson,S. Kilgore
• Publisher : The Electrochemical Society
• Release : 04 May 2018

• Author : V. Chakrapani,S. Calabrese Barton,J. Zavada,S. Jang,T. Anderson,J. Hite
• Publisher : The Electrochemical Society
• Release : 18 May 2022

• Author : J. A. Bardwell
• Publisher : The Electrochemical Society
• Release : 01 April 2011

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

• Author : Anonim
• Publisher : Academic Press
• Release : 26 July 2021

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials

• Author : Katsuaki Suganuma
• Publisher : Woodhead Publishing
• Release : 28 May 2018

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power