Wide Bandgap Semiconductor Power Devices

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  • Author : B. Jayant Baliga
  • Publisher : Woodhead Publishing
  • Pages : 418 pages
  • ISBN : 0081023073
  • Rating : /5 from reviews
CLICK HERE TO GET THIS BOOK >>>Wide Bandgap Semiconductor Power Devices

Download or Read online Wide Bandgap Semiconductor Power Devices full in PDF, ePub and kindle. this book written by B. Jayant Baliga and published by Woodhead Publishing which was released on 17 October 2018 with total page 418 pages. We cannot guarantee that Wide Bandgap Semiconductor Power Devices book is available in the library, click Get Book button and read full online book in your kindle, tablet, IPAD, PC or mobile whenever and wherever You Like. Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
  • Author : B. Jayant Baliga
  • Publisher : Woodhead Publishing
  • Release : 17 October 2018
GET THIS BOOK Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field.

Wide Bandgap Semiconductors for Power Electronics

Wide Bandgap Semiconductors for Power Electronics
  • Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
  • Publisher : John Wiley & Sons
  • Release : 22 November 2021
GET THIS BOOK Wide Bandgap Semiconductors for Power Electronics

A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage to the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information

Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications

Disruptive Wide Bandgap Semiconductors  Related Technologies  and Their Applications
  • Author : Yogesh Kumar Sharma
  • Publisher : BoD – Books on Demand
  • Release : 12 September 2018
GET THIS BOOK Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have

Wide Bandgap Semiconductors

Wide Bandgap Semiconductors
  • Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
  • Publisher : Springer Science & Business Media
  • Release : 12 April 2007
GET THIS BOOK Wide Bandgap Semiconductors

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Short Circuit Requirements of Power Converters based upon Wide Bandgap Semiconductors

Short Circuit Requirements of Power Converters based upon Wide Bandgap Semiconductors
  • Author : Douglas Pappis
  • Publisher : BoD – Books on Demand
  • Release : 01 January 2021
GET THIS BOOK Short Circuit Requirements of Power Converters based upon Wide Bandgap Semiconductors

In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices
  • Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
  • Publisher : CRC Press
  • Release : 03 November 2016
GET THIS BOOK Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Wide Bandgap Semiconductor Electronics And Devices

Wide Bandgap Semiconductor Electronics And Devices
  • Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
  • Publisher : World Scientific
  • Release : 10 December 2019
GET THIS BOOK Wide Bandgap Semiconductor Electronics And Devices

With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the

Wide Bandgap Semiconductor Based Micro Nano Devices

Wide Bandgap Semiconductor Based Micro Nano Devices
  • Author : Jung-Hun Seo
  • Publisher : MDPI
  • Release : 25 April 2019
GET THIS BOOK Wide Bandgap Semiconductor Based Micro Nano Devices

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV)

Wide Bandgap Semiconductor Materials and Devices 12

Wide Bandgap Semiconductor Materials and Devices 12
  • Author : J. A. Bardwell
  • Publisher : The Electrochemical Society
  • Release : 01 April 2011
GET THIS BOOK Wide Bandgap Semiconductor Materials and Devices 12

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Ultrawide Bandgap Semiconductors

Ultrawide Bandgap Semiconductors
  • Author : Anonim
  • Publisher : Academic Press
  • Release : 26 July 2021
GET THIS BOOK Ultrawide Bandgap Semiconductors

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials

Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging
  • Author : Katsuaki Suganuma
  • Publisher : Woodhead Publishing
  • Release : 28 May 2018
GET THIS BOOK Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power