Wide Bandgap Semiconductor Power Devices

• Author : B. Jayant Baliga
• Publisher : Woodhead Publishing
• Release : 17 October 2018

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field.

• Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
• Publisher : World Scientific
• Release : 10 December 2019

With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the

• Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
• Publisher : Springer Science & Business Media
• Release : 12 April 2007

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

• Author : Yuru Wang
• Publisher : Unknown
• Release : 24 June 2021

• Author : Meiyong Liao,Bo Shen,Zhanguo Wang
• Publisher : Elsevier
• Release : 18 June 2019

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book

• Author : Fei Wang,Zheyu Zhang,Edward A. Jones
• Publisher : Institution of Engineering and Technology
• Release : 24 June 2021

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap

• Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
• Publisher : Wiley-VCH
• Release : 08 June 2021

A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage to the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information

• Author : Samuel Vasconcelos Araújo
• Publisher : kassel university press GmbH
• Release : 13 June 2013

• Author : Jung-Hun Seo
• Publisher : MDPI
• Release : 25 April 2019

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV)

• Author : S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
• Publisher : The Electrochemical Society
• Release : 24 June 2021

• Author : Roberto Pierobon
• Publisher : Unknown
• Release : 24 June 2021

• Author : Yogesh Kumar Sharma
• Publisher : BoD – Books on Demand
• Release : 12 September 2018

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have

• Author : Aristos Christou,Manijeh Razeghi,Krishna Shenai
• Publisher : Unknown
• Release : 05 December 2014

A white paper based on topics discussed at the Workshop on Defects in Wide Band Gap Semiconductors, held in College Park, MD, in September 2014.

• Author : Jin Wei
• Publisher : Unknown
• Release : 24 June 2021

• Author : Satoshi Koizumi,Hitoshi Umezawa,Julien Pernot,Mariko Suzuki
• Publisher : Woodhead Publishing
• Release : 29 June 2018

Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and