Thermal Management of Gallium Nitride Electronics

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  • Author : Marko Tadjer
  • Publisher : Woodhead Publishing
  • Pages : 525 pages
  • ISBN : 9780128210840
  • Rating : /5 from reviews
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Download or Read online Thermal Management of Gallium Nitride Electronics full in PDF, ePub and kindle. this book written by Marko Tadjer and published by Woodhead Publishing which was released on 15 March 2022 with total page 525 pages. We cannot guarantee that Thermal Management of Gallium Nitride Electronics book is available in the library, click Get Book button and read full online book in your kindle, tablet, IPAD, PC or mobile whenever and wherever You Like. Electronic device performance has always been restricted by the heat generated during operation. Thermal management employed in mass-produced electronics has not been able to provide a high thermal conductivity path close to the heat generation source in a wide bandgap semiconductor device such as the Gallium Nitride high electron mobility transistor. Over the past 10 years, the authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. A number of research programs have attempted to solve this problem and bring integrated diamond heat spreaders into the world of mass-produced microelectronics. This book outlines the technical approaches undertaken by leaders in the community, as well as the challenges they have faced and the resulting advances in the field. The purpose of this book is to serve as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included such as; the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. The inclusion of all these aspects of diamond thermal management will help enable researchers to make the translation from the lab to the market. Includes fundamentals of thermal management of wide-bandgap semiconductors with historical context, review of common heating issues, thermal transport physics and characterization methods Reviews latest strategies to overcome heating issues through materials modelling, growth and device design strategies Touches on emerging real-world applications for thermal management strategies for power electronics

Thermal Management of Gallium Nitride Electronics

Thermal Management of Gallium Nitride Electronics
  • Author : Marko Tadjer,Travis J. Anderson
  • Publisher : Woodhead Publishing
  • Release : 15 March 2022
GET THIS BOOK Thermal Management of Gallium Nitride Electronics

Electronic device performance has always been restricted by the heat generated during operation. Thermal management employed in mass-produced electronics has not been able to provide a high thermal conductivity path close to the heat generation source in a wide bandgap semiconductor device such as the Gallium Nitride high electron mobility transistor. Over the past 10 years, the authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications
  • Author : Bobby Logan Hancock
  • Publisher : Unknown
  • Release : 27 October 2021
GET THIS BOOK Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications

As trends progress toward higher power applications in GaN-based electronic and photonic devices, the issue of self-heating becomes a prominent concern. This is especially the case for high-brightness light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs), where the bulk of power dissipation occurs within a small (sub-micron) region resulting in highly localized temperature rises during operation. Monitoring these thermal effects becomes critical as they significantly affect performance, reliability, and overall device lifetime. In response to these issues, diamond grown

Gallium Nitride Electronics

Gallium Nitride Electronics
  • Author : Rüdiger Quay
  • Publisher : Springer Science & Business Media
  • Release : 05 April 2008
GET THIS BOOK Gallium Nitride Electronics

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Aspencore Guide to Gallium Nitride

Aspencore Guide to Gallium Nitride
  • Author : Maurizio Di Paolo Emilio,Nitin Dahad
  • Publisher : Unknown
  • Release : 20 January 2021
GET THIS BOOK Aspencore Guide to Gallium Nitride

As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. In over 150 pages covering the technology, its applications, markets and future potential, this book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices. The properties of GaN, such as low leakage current, significantly reduced power losses, higher power

Gallium Nitride GaN

Gallium Nitride  GaN
  • Author : Farid Medjdoub
  • Publisher : CRC Press
  • Release : 19 December 2017
GET THIS BOOK Gallium Nitride GaN

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state

Power Electronics Thermal Management R D

Power Electronics Thermal Management R   D
  • Author : Anonim
  • Publisher : Unknown
  • Release : 27 October 2021
GET THIS BOOK Power Electronics Thermal Management R D

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [sic], gallium nitride [GaN])

III Nitride Electronic Devices

III Nitride Electronic Devices
  • Author : Rongming Chu,Keisuke Shinohara
  • Publisher : Academic Press
  • Release : 01 October 2019
GET THIS BOOK III Nitride Electronic Devices

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical

Gallium Nitride Power Devices

Gallium Nitride Power Devices
  • Author : Hongyu Yu,Tianli Duan
  • Publisher : CRC Press
  • Release : 06 July 2017
GET THIS BOOK Gallium Nitride Power Devices

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique
  • Author : Anonim
  • Publisher : Stanford University
  • Release : 27 October 2021
GET THIS BOOK Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique

Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has

Issues in General Science and Scientific Theory and Method 2013 Edition

Issues in General Science and Scientific Theory and Method  2013 Edition
  • Author : Anonim
  • Publisher : ScholarlyEditions
  • Release : 01 May 2013
GET THIS BOOK Issues in General Science and Scientific Theory and Method 2013 Edition

Issues in General Science and Scientific Theory and Method: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Mixed Methods Research. The editors have built Issues in General Science and Scientific Theory and Method: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Mixed Methods Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of

Gallium Nitride Processing for Electronics Sensors and Spintronics

Gallium Nitride Processing for Electronics  Sensors and Spintronics
  • Author : Stephen J. Pearton,Cammy R. Abernathy,Fan Ren
  • Publisher : Springer Science & Business Media
  • Release : 24 February 2006
GET THIS BOOK Gallium Nitride Processing for Electronics Sensors and Spintronics

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters,

Device level Thermal Analysis of Gallium Nitride based Electronics

Device level Thermal Analysis of Gallium Nitride based Electronics
  • Author : Kevin Robert Bagnall,Massachusetts Institute of Technology. Department of Mechanical Engineering
  • Publisher : Unknown
  • Release : 27 October 2021
GET THIS BOOK Device level Thermal Analysis of Gallium Nitride based Electronics

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys (high critical electric field, carrier concentration, and carrier mobility) have enabled record-breaking performance of GaN-based high electron mobility transistors (HEMTs) for radio-frequency (RF) applications. However, the very high power density in the active region of GaN HEMTs leads to significant degradation in performance as the device temperature increases. Thus,

Advanced Materials for Thermal Management of Electronic Packaging

Advanced Materials for Thermal Management of Electronic Packaging
  • Author : Xingcun Colin Tong
  • Publisher : Springer Science & Business Media
  • Release : 05 January 2011
GET THIS BOOK Advanced Materials for Thermal Management of Electronic Packaging

The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry’s ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining

GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion
  • Author : Alex Lidow,Johan Strydom,Michael de Rooij,David Reusch
  • Publisher : John Wiley & Sons
  • Release : 15 September 2014
GET THIS BOOK GaN Transistors for Efficient Power Conversion

This second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, it serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing