Internal Photoemission Spectroscopy

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  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Pages : 404 pages
  • ISBN : 9780080999296
  • Rating : /5 from reviews
CLICK HERE TO GET THIS BOOK >>>Internal Photoemission Spectroscopy

Download or Read online Internal Photoemission Spectroscopy full in PDF, ePub and kindle. this book written by Valeri V. Afanas'ev and published by Elsevier which was released on 01 March 2014 with total page 404 pages. We cannot guarantee that Internal Photoemission Spectroscopy book is available in the library, click Get Book button and read full online book in your kindle, tablet, IPAD, PC or mobile whenever and wherever You Like. The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Release : 01 March 2014
GET THIS BOOK Internal Photoemission Spectroscopy

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : V. V. Afanasʹev
  • Publisher : Elsevier Science Limited
  • Release : 16 June 2021
GET THIS BOOK Internal Photoemission Spectroscopy

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Release : 07 July 2010
GET THIS BOOK Internal Photoemission Spectroscopy

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy

Internal Photoemission Spectroscopy Principles and Applications

Internal Photoemission Spectroscopy  Principles and Applications
  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Release : 13 November 2017
GET THIS BOOK Internal Photoemission Spectroscopy Principles and Applications

The second edition of "Internal Photoemission Spectroscopy" thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces

Assessment of Barrier Heights Between ZrCuAlNi Amorphous Metal and SiO2 Al2O3 HfO2 and ZrO2 Using Internal Photoemission Spectroscopy

Assessment of Barrier Heights Between ZrCuAlNi Amorphous Metal and SiO2  Al2O3  HfO2  and ZrO2 Using Internal Photoemission Spectroscopy
  • Author : Tyler D. Klarr
  • Publisher : Unknown
  • Release : 16 June 2021
GET THIS BOOK Assessment of Barrier Heights Between ZrCuAlNi Amorphous Metal and SiO2 Al2O3 HfO2 and ZrO2 Using Internal Photoemission Spectroscopy

As scaling of silicon (Si) based devices approaches fundamental limits, thin film metal-insulator-metal (MIM) tunnel diodes are attracting interest due to their potential for high speed operation. Because operation of these devices is based on tunneling, electrode / interfacial roughness is critical. Recently, it was shown that combining ultra-smooth bottom electrodes with insulators deposited via atomic layer deposition (ALD) enables reproducible fabrication of MIM diodes with stable I-V behavior. Key performance parameters of MIM diodes include high I-V asymmetry and low

Contacts to Semiconductors

Contacts to Semiconductors
  • Author : L. J. Brillson
  • Publisher : William Andrew
  • Release : 16 June 1993
GET THIS BOOK Contacts to Semiconductors

The authors present the state of the art in growing, processing, and characterizing electronic junctions. Overall, they have assembled a broad array of the latest semiconductor interface science and technology, ranging from advanced ohmic, Schottky, and heterojunction contacts to the refined perspectives of microscopic junctions gleaned from ultrahigh vacuum surface science techniques. Considerable progress has been made in these areas over the last few years. This book is intended for technologists and solid state researchers alike.

Electric Field Penetration in Au Nb

Electric Field Penetration in Au Nb
  • Author : Anonim
  • Publisher : Unknown
  • Release : 16 June 2021
GET THIS BOOK Electric Field Penetration in Au Nb

Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO3 and gold. A clear linear reduction of the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO3 at

Properties of Amorphous Silicon and Its Alloys

Properties of Amorphous Silicon and Its Alloys
  • Author : Tim Searle,INSPEC (Information service)
  • Publisher : Inst of Engineering & Technology
  • Release : 16 June 1998
GET THIS BOOK Properties of Amorphous Silicon and Its Alloys

Coverage: preparation and material quality; structural and vibrational properties; electronic structure; electronic transport recombination of excess carriers; Schottky junctions; multilayers; optical constants; mechanical and thermal properties; TFTs; solar cells; photodetectors; large area displays; LEDs; xerographic applications.